creat by art - low power loss, high efficiency - guardring for overvoltage protection - high surge current capability - ul recognized file # e-326243 - halogen-free according to iec 61249-2-21 definition molding compound, ul flammability classification rating 94v-0 base p/n with suffix "g" on packing code - halogen-free base p/n with prefix "h" on packing code - aec-q101 qualified terminal: matte tin plated leads, solderable per jesd22-b102 meet jesd 201 class 1a whisker test, with prefix "h" on packing code meet jesd 201 class 2 whisker test v rrm 35 45 50 60 90 100 v v rms 24 31 35 42 63 70 v v dc 35 45 50 60 90 100 v i f(av) a i rrm a dv/dt v/ s r jc o c/w t j o c t stg o c document number: ds_d1309013 version: i13 mbrf2035 thru MBRF20100 taiwan semiconductor isolated schottk y barrier rectifiers features - compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec mechanical data ito-220ac case: ito-220ac polarity: as marked mounting torque: 5 in-lbs maximum weight: 1.8 g (approximately) maximum ratings and electrical characteristics (t a =25 unless otherwise noted) parameter symbol mbrf 2035 mbrf 2045 mbrf 2050 mbrf 2060 mbrf 2090 mbrf 20100 unit maximum repetitive peak reverse voltage maximum rms voltage maximum dc blocking voltage maximum average forward rectified current 20 peak repetitive forward current (rated vr, square wave, 20khz) i frm 40 a peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load i fsm 150 a peak repetitive reverse surge current (note 1) 1 0.5 v 0.75 0.82 0.95 0.65 0.72 0.87 maximum reverse current @ rated v r t j =25 t j =125 i r 0.2 0.1 maximum instantaneous forward voltage (note 2) i f =20a, t j =25 i f =20a, t j =125 v f ma 15 10 5 storage temperature range - 55 to +150 note 1: tp = 2.0 s, 1.0khz note 2: pulse test with pw=300 s, 1% duty cycle voltage rate of change (rated v r ) 10000 typical thermal resistance 3 operating junction temperature range - 55 to +150
creat by art part no. note 1: "xx" defines voltage from 35v (mbrf2035) to 100v (MBRF20100) part no. mbrf2060 mbrf2060 mbrf2060 (ta=25 unless otherwise noted) document number: ds_d1309013 version: i13 mbrf2035 thru MBRF20100 taiwan semiconductor ordering information aec-q101 qualified packing code green compound code package packing mbrf20xx (note 1) prefix "h" c0 suffix "g" ito-220ac 50 / tube example preferred p/n aec-q101 qualified packing code green compound code description mbrf2060 c0 c0 mbrf2060 c0g c0 g green compound mbrf2060hc0 h c0 aec-q101 qualified ratings and characteristics curves 0 4 8 12 16 20 24 50 60 70 80 90 100 110 120 130 140 150 average forward current (a) case temperature ( o c) fig.1 forward current derating curve resistive or inductiveload with heatsink 0 25 50 75 100 125 150 0 1 10 100 peak forward surge current (a) number of cycles at 60 hz fig. 2 maximum non-repetitive forward surge current per leg 8.3ms single half sine wave jedec method 0.01 0.1 1 10 100 0 20 40 60 80 100 120 140 instantaneous reverse current (ma) percent of rated peak reverse voltage (%) fig. 4 typical reverse characteristics per leg tj=125 tj=25 0.01 0.1 1 10 100 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 instantaneous forward current (a) forward voltage (v) fig. 3 typical forward characteristics per leg tj=125 pulse width=300 s 1% duty cycle tj=25 mbrf2035-2045 mbrf2050-2060 mbrf2090-20100
creat by art min max min max a 4.30 4.70 0.169 0.185 b 2.50 3.10 0.098 0.122 c 2.30 2.90 0.091 0.114 d 0.46 0.76 0.018 0.030 e 6.30 6.90 0.248 0.272 f 9.60 10.30 0.378 0.406 g 3.00 3.40 0.118 0.134 h 0.00 1.60 0.000 0.063 i 0.95 1.45 0.037 0.057 j 0.50 0.90 0.020 0.035 k 2.40 3.20 0.094 0.126 l 14.80 15.50 0.583 0.610 m - 4.10 - 0.161 n - 1.80 - 0.071 o 12.60 13.80 0.496 0.543 p 4.95 5.20 0.195 0.205 p/n = specific device code g = green compound yww = date code f = factory code document number: ds_d1309013 version: i13 marking diagram mbrf2035 thru MBRF20100 taiwan semiconductor package outline dimensions dim. unit (mm) unit (inch) 100 1000 10000 0.1 1 10 100 junction capacitance (pf) a reverse voltage (v) fig. 5 typical junction capacitance per leg f=1.0mhz vsig=50mvp-p mbrf2035-2060 mbrf2090-20100 0.1 1 10 100 0.01 0.1 1 10 100 transient thermal impedance ( /w) t-pulse duration(s) fig. 6 typical transient thermal impedance per leg
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